Compared to p-type cells, n-type cells boast several advantages, including higher conversion efficiency, lower temperature coefficients, higher bifaciality rates, and longer carrier lifetimes. The n-type silicon wafers are doped with phosphorus, a Group V element, which eliminates the light-induced degradation associated with boron-oxygen complexes found in p-type cells, resulting in superior reliability.

In the fabrication methods for the critical structures of TOPCon solar cells, there are currently three options on the market: LPCVD (Low-Pressure Chemical Vapor Deposition), PECVD (Plasma-Enhanced Chemical Vapor Deposition), and our company's PVD (Physical Vapor Deposition). The PVD technology is mature, does not result in cross-contamination, and has a lower risk of reverse leakage, thereby avoiding the need for a cleaning process to remove cross-contamination, which reduces both process time and manufacturing costs. Jolywood possesses patents for PVD technology, integrating the steps of deposition, diffusion, and cross-contamination removal into a single piece of equipment, which simplifies maintenance and keeps costs low.